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SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1449
DESCRIPTION *With TO-126 package *Low collector saturation voltage APPLICATIONS *Low frequency power amplification *High frequency amplification
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base
Absolute maximum ratings (Ta=25 )
SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 10 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 40 35 5 2 1 1.0 W UNIT V V V A A
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain Collector cut-off current Emitter cut-off current Output capacitance Transition frequency CONDITIONS IC=100A;IE=0 IC=10mA; IB=0 IE=100A; IC=0 IC=500mA ;IB=50m A IC=500mA ;IB=50m A IC=300mA ; VCE=2V VCB=35V; IE=0 VEB=4V; IC=0 IE=0; VCB=10V;f=1MHz IC=100mA ; VCE=5V 40 MIN 40 35 5
2SC1449
SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCEsat VBEsat hFE ICBO IEBO COB fT
TYP.
MAX
UNIT V V V
0.7 1.5 250 0.5 0.5 20 55
V V
A A pF MHz
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC1449
Fig.2 outline dimensions
3

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